我们相信这种 3D 堆叠的互补金属氧化物半导体 (CMOS) 或 CFET（互补场效应晶体管）将是将摩尔定律延伸到下一个十年的关键。 在过去的 50 年中，影响最深远的技术成就可能是晶体管一如既往地稳步向更小迈进，使它们更紧密地结合在一起，并降低了它们的功耗。

在过去的 50 年中，影响最深远的技术成就可能是晶体管一如既往地稳步向更小迈进，使它们更紧密地结合在一起，并降低了它们的功耗。然而，自从 20 多年前笔者在英特尔开始职业生涯以来，我们就一直在听到警报——晶体管下降到无穷小的状态即将结束。

Applications ranging from frequency counting and synthesis to sensor signal conditioning require conversion of RF signals to digital-logic levels. In such situations, designers typically use a ...

The inverters in a CMOS CD4069 can be used for both analog as well as digital applications. This Design Idea illustrates this by using all six inverters in a 4069 package to make a closed loop, ...

New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. In this study, we present a ...

Single-chip transmitters proposed by some IC manufacturers have good electrical performance, but they're often plagued by some drawbacks. For instance, they're hard to find in small quantities. Also, ...

WEST LAFAYETTE, Ind. - A laboratory at Purdue University provided a critical part of the world's first transistor in 1947 - the purified germanium semiconductor - and now researchers here are on the ...