Using a new fabrication technique, engineers have developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new ...

This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...

If you ever work with a circuit that controls a decent amount of current, you will often encounter a FET – a Field-Effect Transistor. Whether you want to control a couple of powerful LEDs, switch a ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...