在10纳米以下的先进半导体技术节点中，精确控制平带电压（VFB）对于调节阈值电压至关重要。本研究系统地研究了将掺钛的HfO2（HTO）中间层引入金属氧化物半导体电容器中，以调节VFB同时保持良好的电气性能。通过原子层沉积（ALD）超循环制备了约2纳米厚的HTO ...

为解决HfO2基铁电材料极化特性与可靠性间的固有矛盾，研究人员通过原子层沉积（ALD）技术引入0.1 nm AlOx插层，系统研究了其对Hf0.5Zr0.5O2（HZO）薄膜晶粒尺寸和氧空位的调控作用。结果表明，该插层可显著降低漏电流（2个数量级）、提升剩余极化强度（Pr/Ec值 ...

BILTHOVEN, THE NETHERLANDS, December 11, 2008 – Further extending its leadership in the critical atomic layer deposition (ALD) market, ASM International N.V. (NASDAQ: ASMI and Euronext Amsterdam: ASM) ...

Material development for semiconductor and thin film materials requires a full understanding of the material characteristics and how they impact each other. The Thermo Scientific™ Nexsa™ XPS System ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

Hafnium-based FE materials have attracted particular interest owing to their low power consumption, strong compatibility with complementary metal-oxide-semiconductor (CMOS) processes and proven ...