在性能相当的条件下，一颗 PMOS 管的器件面积通常需要达到 NMOS 管的 2~3 倍。更大的面积不仅影响芯片的集成度，也会带来更高的导通电阻和输入输出电容，进而增加电路延迟。 与此同时，若尺寸相同，PMOS 的沟道导通电阻一般大于 NMOS，因此其开关过程中的导通 ...

一般工作线上性区域的电晶体，可以把它当作是一个压控电流源，去控制电路并连续检测输出电压，然后根据负载的需求，进行调节电流源，确保输出电压能够保持在期望的数值。 电流源的设计极限就出现了作用：它限定了稳压器在保持电压调节作用的情况下 ...

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...

When a CMOS circuit is in an idle state there is still some static power dissipation–a result of leakage current through nominally off transistors. Both nMOS and pMOS transistors used in CMOS logic ...

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...

Moore’s Law has been the guiding principle for the semiconductor industry for more than fifty years. For thirty of those years, I have had the privilege of working in Intel’s technology development ...

Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...