通过在全新的1anm LPDDR5X DRAM中采用HKMG(High-k/Metal Gate)新技术,SK海力士发现即便在低功率设置下也实现了晶体管性能的显著提高。 由于传统微缩(scaling)技术系统的限制,DRAM的性能被要求不断提高,而HKMG(High-k/Metal Gate)则成为突破这一困局的解决方案。SK海力士 ...
由于传统微缩(scaling)技术系统的限制,DRAM的性能被要求不断提高,而HKMG(High-k/Metal Gate)则成为突破这一困局的解决方案。SK海力士通过采用该新技术,并将其应用于全新的1anm LPDDR5X DRAM, 即便在低功率设置下也实现了晶体管性能的显著提高。本文针对HKMG及其使用 ...
In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
The IC industry is headed toward a new era of scaling–and uncertainty–as chip makers race to develop the key building blocks for the next-generation transistor: high-k dielectrics and metal gates.
Unlock to see our ratings and compare products side by side This pressure-mounted gate is easy to install and secure. It measures 30 1/4 inches in height and can span openings from 29 to 38 1/2 inches ...
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