A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was ...

WEST LAFAYETTE, Ind. - A simulation of electrical current moving through a futuristic electronic transistor has been modeled atom-by-atom in less than 15 minutes by Purdue University researchers. The ...

(Nanowerk News) A simulation of electrical current moving through a futuristic electronic transistor has been modeled atom-by-atom in less than 15 minutes by Purdue University researchers. The work ...

As electronic devices become increasingly miniaturized, heat management at the nanoscale emerges as a challenge, especially for devices operating in sub-microns. Traditional heat conduction models ...

Just before fabrication, the design flow of all integrated circuits (ICs) culminates in transistor-based, top-level simulations. Unfortunately, verifying functionality, connectivity, and performance ...

Before circuit design can begin on any advanced semiconductor manufacturing process, the electrical behavior of the devices — transistors, diodes, resistors — must be described accurately in so-called ...

The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...

SANTA CLARA, Calif.--(BUSINESS WIRE)--July 24, 2006--Magma(R) Design Automation Inc. (Nasdaq:LAVA), a provider of semiconductor design software, today announced the availability of FineSim(R) Pro, the ...

When first-pass silicon arrives back from the foundry, accurate simulation models are critical to first-time success. Of course, we all prefer to avoid expensive learning experiences. So every ...